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4N25V, 4N25GV, 4N35V, 4N35GV
Vishay Semiconductors
Optocoupler, Phototransistor Output
FEATURES
B 6 C 5 E 4
* Special construction: therefore, extra low coupling capacity of typical 0.2 pF, high common mode rejection * Low temperature coefficient of CTR * Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak) * Rated recurring peak VIORM = 600 VRMS voltage (repetitive)
1
2
3
A (+) C (-) NC
DE
18537_4
V
* Thickness through insulation 0.4 mm * Creepage current resistance according to VDE 0303/ IEC 60112 comparative tracking index: CTI 275 * Rated impulse VIOTM = 6 kV peak voltage (transient overvoltage)
17201_4
DESCRIPTION
The 4N25V, 4N25GV, 4N35V, 4N35GV series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package.
* Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV * Compliant to RoHS directive 2002/95/EC accordance to WEEE 2002/96/EC and in
VDE STANDARDS
These couplers perform safety functions according to the following equipment standards: DIN EN 60747-5-5 (VDE 0884) Optocoupler for electrical safety requirements IEC 60950 Office machines (applied for reinforced isolation for mains voltage 400 VRMS) VDE 0804 Telecommunication apparatus and data processing IEC 60065 Safety for mains-operated electronic and related household apparatus
APPLICATIONS
* Switch-mode power supplies * Line receiver * Computer peripheral interface * Microprocessor system interface * Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): - for appl. class I - IV at mains voltage 300 V - for appl. class I - III at mains voltage 600 V according to DIN EN 60747-5-5
AGENCY APPROVALS
* UL1577, file no. E52744, double protection * BSI: BS EN 41003, BS EN 60065 (BS 415), pending * DIN EN 60747-5-5 (VDE 0884) * FIMKO (SETI): EN 60950, certificate no. FI25155
ORDER INFORMATION
PART 4N25GV 4N35GV 4N25V 4N35V
(1)
REMARKS CTR > 20 % wide lead spacing, DIP-6 CTR > 100 % wide lead spacing, DIP-6 CTR > 20 %, DIP-6 CTR > 100 %, DIP-6
Note (1) G = leadform 10.16 mm; G is not marked on the body.
Document Number: 83530 Rev. 2.0, 26-Oct-09
For technical questions, contact: optocoupleranswers@vishay.com
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4N25V, 4N25GV, 4N35V, 4N35GV
Vishay Semiconductors Optocoupler, Phototransistor Output
ABSOLUTE MAXIMUM RATINGS
PARAMETER INPUT Reverse voltage Forward current Forward surge current Power dissipation Junction temperature OUTPUT Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature COUPLER Isolation test voltage (RMS) Total power dissipation Ambient temperature range Storage temperature range Soldering temperature (2)
(1)
TEST CONDITION
SYMBOL VR IF
VALUE 5 60 3 70 125 32 7 50 100 70 125 5000 200 - 55 to + 100 - 55 to + 125 260
UNIT V mA A mW C V V mA mA mW C VRMS mW C C C
tp 10 s
IFSM Pdiss Tj VCEO VECO IC
tp/T = 0.5, tp 10 ms
ICM Pdiss Tj VISO Ptot Tamb Tstg
2 mm from case, t 10 s
Tsld
Notes (1) T amb = 25 C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to wave profile for soldering conditions for through hole devices.
ELECTRICAL CHARACTERISTICS
PARAMETER INPUT Forward voltage Junction capacitance OUTPUT Collector emitter voltage Emitter collector voltage
(1)
TEST CONDITION IF = 50 mA VR = 0 V, f = 1 MHz IC = 1 mA IE = 100 A VCE = 10 V, IF = 0, Tamb = 100 C VCE = 30 V, IF = 0, Tamb = 100 C IF = 50 mA, IC = 2 mA VCE = 5 V, IF = 10 mA, RL = 100 f = 1 MHz
SYMBOL VF Cj VCEO VECO ICEO ICEO
MIN.
TYP. 1.2 50
MAX. 1.4
UNIT V pF V V
32 7 50 500
nA nA
Collector emitter leakage current
COUPLER Collector emitter saturation voltage Cut-off frequency Coupling capacitance
(1)
VCEsat fc Ck 110 1
0.3
V kHz pF
Note Tamb = 25 C, unless otherwise specified. Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.
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For technical questions, contact: optocoupleranswers@vishay.com
Document Number: 83530 Rev. 2.0, 26-Oct-09
4N25V, 4N25GV, 4N35V, 4N35GV
Optocoupler, Phototransistor Output Vishay Semiconductors
CURRENT TRANSFER RATIO
PARAMETER TEST CONDITION PART 4N25V VCE = 10 V, IF = 10 mA IC/IF VCE = 10 V, IF = 10 mA, Tamb = 100 C 4N25GV 4N35V 4N35GV 4N35V 4N35GV SYMBOL CTR CTR CTR CTR CTR CTR MIN. 20 100 40 TYP. 100 150 MAX. UNIT % % %
MAXIMUM SAFETY RATINGS
PARAMETER INPUT Forward current OUTPUT Power dissipation COUPLER Rated impulse voltage Safety temperature
(1)
TEST CONDITION
SYMBOL IF Pdiss VIOTM Tsi
MIN.
TYP.
MAX. 130 265 6 150
UNIT mA mW kV C
Note (1) According to DIN EN 60747-5-5 (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
INSULATION RATED PARAMETERS
PARAMETER Partial discharge test voltage routine test Partial discharge test voltage lot test (sample test) TEST CONDITION 100 %, ttest = 1 s tTr = 60 s, ttest = 10 s, (see figure 2) VIO = 500 V Insulation resistance VIO = 500 V, Tamb = 100 C VIO = 500 V, Tamb = 150 C (construction test only) SYMBOL Vpd VIOTM Vpd RIO RIO RIO MIN. 1600 6000 1400 1012 1011 109 TYP. MAX. UNIT V V V
Ptot - Total Power Dissipation (mW)
300 250 200 Phototransistor Psi (mW)
VIOTM t1, t2 t3 , t4 ttest tstres VPd = 1 to 10 s =1s = 10 s = 12 s
150 100 50 0 0 25 50 75 100 125 IR-diode Isi (mA)
VIOWM VIORM
0
t3 ttest t4 t1 tTr = 60 s t2 t stres t
150
13930
94 9182
Tsi - Safety Temperature (C)
Fig. 1 - Derating Diagram
Fig. 2 - Test Pulse Diagram for Sample Test according to DIN EN 60747-; IEC 60747
Document Number: 83530 Rev. 2.0, 26-Oct-09
For technical questions, contact: optocoupleranswers@vishay.com
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4N25V, 4N25GV, 4N35V, 4N35GV
Vishay Semiconductors Optocoupler, Phototransistor Output
SWITCHING CHARACTERISTICS
PARAMETER Delay time (see figure 3) TEST CONDITION VS = 5 V, IC = 5 mA, RL = 100 , VS = 5 V, IC = 2 mA, RL = 100 , VS = 5 V, IC = 5 mA, RL = 100 , VS = 5 V, IC = 2 mA, RL = 100 , VS = 5 V, IC = 5 mA, RL = 100 , VS = 5 V, IC = 2 mA, RL = 100 , VS = 5 V, IC = 5mA, RL = 100 , VS = 5 V, IC = 2 mA, RL = 100 , VS = 5 V, IC = 5 mA, RL = 100 , VS = 5 V, IC = 2 mA, RL = 100 , VS = 5 V, IC = 5 mA, RL = 100 , VS = 5 V, IC = 2 mA, RL = 100 , PART 4N25V 4N25GV 4N35V 4N35GV 4N25V 4N25GV 4N35V 4N35GV 4N25V 4N25GV 4N35V 4N35GV 4N25V 4N25GV 4N35V 4N35GV 4N25V 4N25GV 4N35V 4N35GV 4N25V 4N25GV 4N35V 4N35GV 4N25V 4N25GV 4N35V 4N35GV 4N25V 4N25GV 4N35V 4N35GV SYMBOL td td tr tr tf tf ts ts ton ton toff toff ton ton toff toff 25 9 42.5 25 7 10 MIN. TYP. 4 2.5 7 3 6.7 4.2 0.3 0.3 11 10 MAX. UNIT s s s s s s s s s s s s s s s s
Rise time (see figure 3)
Fall time (see figure 3)
Storage time (see figure 3)
Turn-on time (see figure 3)
Turn-off time (see figure 3)
Turn-on time (see figure 4)
VS = 5 V, IF = 10 mA, RL = 1 k,
Turn-off time (see figure 4)
VS = 5 V, IF = 10 mA, RL = 1 k,
0
IF
IF
+5V IC = 5 mA / 2 mA adjusted through input amplitude 0
IF
IF = 10 mA
+5V IC
RG = 50 tp = 0.01 T tp = 50 s
Channel I Channel II 50 100 Oscilloscope RL 1 M CL 20 pF
RG = 50 tp = 0.01 T tp = 50 s
Channel I Channel II 50 1k Oscilloscope RL 1 M CL 20 pF
14950
95 10844
Fig. 3 - Test circuit, Non-Saturated Operation
Fig. 4 - Test Circuit, Saturated Operation
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For technical questions, contact: optocoupleranswers@vishay.com
Document Number: 83530 Rev. 2.0, 26-Oct-09
4N25V, 4N25GV, 4N35V, 4N35GV
Optocoupler, Phototransistor Output Vishay Semiconductors
IF 0 IC 100 % 90 % tp t
10 % 0 tr td t on tp td tr t on (= td + tr) Pulse duration Delay time Rise time Turn-on time ts tf t off t
ts tf t off (= ts + tf)
Storage time Fall time Turn-off time
96 11698
Fig. 5 - Switching Times
TYPICAL CHARACTERISTICS
Tamb = 25 C, unless otherwise specified
CTRrel - Relative Current Transfer Ratio
Ptot - Total Power Dissipation (mW)
300 Coupled device 250 200 Phototransistor 150 100 50 0 0 40 80 120 IR-diode
1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 - 30 - 20 - 10 0 10 20 30 40 50 60 70 80 VCE = 10 V IF = 10 mA
96 11700
Tamb - Ambient Temperature (C)
96 11874
Tamb - Ambient Temperature (C)
Fig. 6 - Total Power Dissipation vs. Ambient Temperature
Fig. 8 - Relative Current Transfer Ratio vs. Ambient Temperature
ICEO - Collector Dark Current (nA)
1000
10 000 VCE = 10 V IF = 0 A 1000
IF - Forward Current (mA)
100
10
100
1
10
0.1 0
96 11862
0.4
0.8
1.2
1.6
2.0
96 11875
1 0 10 20 30 40 50 60 70 80 90 100
VF - Forward Voltage (V)
Fig. 7 - Forward Current vs. Forward Voltage
Tamb - Ambient Temperature (C)
Fig. 9 - Collector Dark Current vs. Ambient Temperature www.vishay.com 143
Document Number: 83530 Rev. 2.0, 26-Oct-09
For technical questions, contact: optocoupleranswers@vishay.com
4N25V, 4N25GV, 4N35V, 4N35GV
Vishay Semiconductors Optocoupler, Phototransistor Output
ICB - Collector Base Current (mA)
1.000
1.0
VCEsat - Collector Emitter Saturation Voltage (V)
VCB = 10 V 0.100
0.8 20 % used 0.6 CTR = 50 % used 0.4 0.2 10 % used 0 1 10 100
0.010
0.001 1 10 100
95 10972
96 11876
IF - Forward Current (mA)
IC - Collector Current (mA)
Fig. 10 - Collector Base Current vs. Forward Current
Fig. 13 - Collector Emitter Saturation Voltage vs. Collector Current
100
1000 VCE = 10 V
IC - Collector Current (mA)
hFE - DC Current Gain
10
800 VCE = 10 V 600 5V 400 200 0
1
0.1
0.01 0.1
96 11904
1
10
100
95 10973
0.01
0.1
1
10
100
IF - Forward Current (mA)
IC - Collector Current (mA)
Fig. 11 - Collector Current vs. Forward Current
Fig. 14 - DC Current Gain vs. Collector Current
IC - Collector Current (mA)
IF = 50 mA
CTR - Current Transfer Ratio (%)
100 20 mA
1000 VCE = 20 V
10
10 mA 5 mA
100
1
2 mA 1 mA
10
0.1 0.1
96 11905
1
10
100
1 0.1
1
10
100
VCE - Collector Emitter (V)
95 10976
IF - Forward Current (mA)
Fig. 12 - Collector Current vs. Collector Emitter Voltage
Fig. 15 - Current Transfer Ratio vs. Forward Current
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For technical questions, contact: optocoupleranswers@vishay.com
Document Number: 83530 Rev. 2.0, 26-Oct-09
4N25V, 4N25GV, 4N35V, 4N35GV
Optocoupler, Phototransistor Output Vishay Semiconductors
ton/toff - Turn-on/Turn-off Time (s)
ton/toff - Turn-on/Turn-off Time (s)
50 Saturated operation VS = 5 V RL = 1 k
20 Non-saturated operation VS = 10 V RL = 100 toff 10 ton 5
40
15
30 toff 20 10 0 0 5 10 15 ton 20
0 0 2 4 6 8 10
95 10974
IF - Forward Current (mA)
95 10975
IC - Collector (mA)
Fig. 16 - Turn-on/off Time vs. Forward Current
Fig. 17 - Turn-on/off Time vs. Collector Current
PACKAGE DIMENSIONS in millimeters
DIP-6
7.62 typ. 7.12 0.3 6.5 0.3 3.5 0.3
4.5 0.3 4.5 0.3 0.25 7.62 to 9.5 typ. 7.62 typ. 7.12 0.3 6.5 0.3 3.5 0.3 0.25 10.16 (typ.) 6 5 4 4.5 0.3
0.5 0.1 1.2 0.1 6 5 4
14771_2
123
DIP-6, 400 mil
4.5 0.3
0.5 0.1 1.2 0.1
14771_1
123
PACKAGE MARKING
4N25 V YWW 24
21764-32
2.8 0.5
2.8 0.5
Document Number: 83530 Rev. 2.0, 26-Oct-09
For technical questions, contact: optocoupleranswers@vishay.com
www.vishay.com 145
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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